3sk41 Datasheet Site

). According to documentation from manufacturers like Jotrin Electronics and Littlediode : N-Channel Dual-Gate MOSFET Package: TO-72 (4-lead metal can) Drain-Source Voltage ( VDScap V sub cap D cap S end-sub ): Typically rated up to Gate-Source Voltage ( VG1Scap V sub cap G 1 cap S end-sub VG2Scap V sub cap G 2 cap S end-sub ): ± (dependent on manufacturer data) Maximum Drain Current ( IDcap I sub cap D ): Total Device Dissipation ( PDcap P sub cap D ): Forward Transfer Admittance ( ): (high transconductance) Noise Figure ( NFcap N cap F ): Low-noise performance for superior weak-signal reception 3. Pin Configuration (TO-72 Package) The 3SK41 typically uses a four-lead TO-72 package. Drain (D) Source (S) / Shield Gate 1 ( G1cap G sub 1 - Input) Gate 2 ( G2cap G sub 2 - AGC/Control) Note: The case is usually connected to the Source ( ) to provide shielding, reducing parasitic capacitance. 4. Key Features & Advantages

In superheterodyne receiver circuits, the 3SK41 operates as a low-noise mixer. The RF signal is fed to G1cap G sub 1 , while the local oscillator (LO) frequency drives G2cap G sub 2

The is a legacy N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily designed for high-frequency applications, such as VHF (Very High Frequency) amplifiers and mixers in radio and television tuners. Core Specifications

RDS(on)cap R sub cap D cap S open paren o n close paren end-sub to reduce thermal dissipation during conduction cycles. Pinout and Mechanical Configuration 3sk41 datasheet

The 3SK41 stands out because of its dual-gate architecture, which reduces feedback capacitance ( Crsscap C sub r s s end-sub

Are you trying to calculate the for an RF circuit?

I can provide target resistor values or schematic modification advice for your repair. AI responses may include mistakes. Learn more Share public link Drain (D) Source (S) / Shield Gate 1

Since the 3SK41 has been discontinued for decades, finding original parts can be difficult and expensive. However, the transistor is not unique, and several suitable replacements have been identified by the electronics community. A summary of modern equivalents is detailed in the table below.

While the original datasheet is out of print, consolidated technical data from component databases reveals the following absolute maximum ratings and electrical characteristics (at Ta = 25°C).

The 3SK41 is an primarily designed for VHF (Very High Frequency) amplification . All sources agree that it is a low-power, high-frequency device designed for the front-end stages of receivers. The consensus on its key absolute maximum ratings is as follows: The RF signal is fed to G1cap G

Unlike single-gate MOSFETs, the dual-gate structure allows for a second gate ( G2cap G sub 2

If you are looking for the specifications, this guide breaks down the essential parameters, pinouts, and application details you need for your project. 1. Overview and Key Features

: Improving receiver sensitivity by up to 6dB in some modifications.

Encapsulated in a CAN-4 metal package for improved heat dissipation and shielding. Breakdown Voltage ( Vbrcap V sub b r end-sub GSS): Approximately 7.0V . Maximum Power Dissipation ( PDcap P sub cap D ): Up to 250mW . Forward Transfer Admittance ( gfsg sub f s end-sub ): Minimum 8.0 mS (millisiemens). Input Capacitance ( Cisscap C sub i s s end-sub ): Maximum 5.0 pF . Understanding the Dual-Gate Advantage